MOSFET N-CH 50V 160MA SOT-523 Product overview: DMN55D0UT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 160MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 160MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN55D0UT-7 can be used for catalog matching and distributor lookup.
N-Channel 50V 160mA (Ta) 200mW (Ta) Surface Mount SOT-523
Manufacturer: Diodes Incorporated
Win Source Part Number: 014447-DMN55D0UT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Family Name: DMN55D0UT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-523
Dimension: SOT-523
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 160mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 25pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 4 Ohm @ 100mA, 4V
Alternative Parts (Cross-Reference): RUE002N05TL; RUE002N05; RYE002N05TCL; RYE002N05TL ;
Introduction Date: March 14, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 50V 160MA SOT-523
MOSFET N-CH 50V 160MA SOT-523
50V 160mA 200mW 4Ω@4V,100mA 1V@250uA N Channel SOT-523 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN55D0UT-7 | DMN55D0UTDITR-ND | 014447-DMN55D0UT-7 | DMN55D0UT-7 | DMN55D0UT-7 | DMN55D0UT-7 | DMN55D0UT-7 |
| Product Name | 50V 160MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN55D0UT-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 50 volts | 50 volts | 50 volts | 50 volts | |||
| Transconductance | 1.80E-4 kS | ||||||
| PD | 200 milliwatts | 200 milliwatts | 200 milliwatts | 200 milliwatts |
