DIODES Incorporated FET, MOSFET Arrays DMN52D0UVTQ-7

The DMN52D0UVTQ-7 is a 50V N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive-grade applications requiring AEC-Q101 qualification and PPAP capability. It has a maximum continuous drain current of 430 mA at 25°C with a gate-source voltage of 5V, and a maximum on-resistance of 2.0Ω at VGS=5.0V. The device features low gate threshold voltage (0.49V to 1.0V), fast switching speed, and ESD protection. It operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 244°C/W under minimum pad layout conditions, and is RoHS compliant and marked as a "Green" device. The part is supplied in a 3,000-unit reel.