DIODES Incorporated FET, MOSFET Arrays DMN52D0UVTQ-7

Description
MOSFET 2N-CH 50V 0.43A TSOT26
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Description
MOSFET 2N-CH 50V 0.43A TSOT26
Request a Quote
Datasheet
Datasheet Summary
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The DMN52D0UVTQ-7 is a 50V N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive-grade applications requiring AEC-Q101 qualification and PPAP capability. It has a maximum continuous drain current of 430 mA at 25°C with a gate-source voltage of 5V, and a maximum on-resistance of 2.0Ω at VGS=5.0V. The device features low gate threshold voltage (0.49V to 1.0V), fast switching speed, and ESD protection. It operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 244°C/W under minimum pad layout conditions, and is RoHS compliant and marked as a "Green" device. The part is supplied in a 3,000-unit reel.

Datasheet Summary
Powered by GS/AI

The DMN52D0UVTQ-7 is a 50V N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive-grade applications requiring AEC-Q101 qualification and PPAP capability. It has a maximum continuous drain current of 430 mA at 25°C with a gate-source voltage of 5V, and a maximum on-resistance of 2.0Ω at VGS=5.0V. The device features low gate threshold voltage (0.49V to 1.0V), fast switching speed, and ESD protection. It operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 244°C/W under minimum pad layout conditions, and is RoHS compliant and marked as a "Green" device. The part is supplied in a 3,000-unit reel.

Suppliers

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Product
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FET, MOSFET Arrays - 31-DMN52D0UVTQ-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN52D0UVTQ-7TR-ND
FET, MOSFET Arrays 31-DMN52D0UVTQ-7TR-ND
MOSFET 2N-CH 50V 0.43A TSOT26

MOSFET 2N-CH 50V 0.43A TSOT26

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMN52D0UVTQ-7TR-ND
Product Name FET, MOSFET Arrays
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6
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