DIODES Incorporated FET, MOSFET Arrays DMN52D0UVTQ-13

Description
MOSFET 2N-CH 50V 0.43A TSOT26
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Description
MOSFET 2N-CH 50V 0.43A TSOT26
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Datasheet
Datasheet Summary
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The DMN52D0UVTQ-13 is a 50V N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive and general-purpose switching applications. It features a maximum continuous drain current of 430mA at 25°C, a low on-resistance of 2.0Ω at VGS=5.0V and 2.5Ω at VGS=2.5V, and a gate threshold voltage range of 0.49V to 1.0V. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It has a total power dissipation of 0.5W with a thermal resistance of 244°C/W on a minimum pad layout, and operates over a temperature range of -55°C to +150°C. The part is RoHS compliant, halogen- and antimony-free, and supplied in a 10,000-unit reel package.

Datasheet Summary
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The DMN52D0UVTQ-13 is a 50V N-channel enhancement mode MOSFET in a TSOT26 package, designed for automotive and general-purpose switching applications. It features a maximum continuous drain current of 430mA at 25°C, a low on-resistance of 2.0Ω at VGS=5.0V and 2.5Ω at VGS=2.5V, and a gate threshold voltage range of 0.49V to 1.0V. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It has a total power dissipation of 0.5W with a thermal resistance of 244°C/W on a minimum pad layout, and operates over a temperature range of -55°C to +150°C. The part is RoHS compliant, halogen- and antimony-free, and supplied in a 10,000-unit reel package.

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 31-DMN52D0UVTQ-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN52D0UVTQ-13TR-ND
FET, MOSFET Arrays 31-DMN52D0UVTQ-13TR-ND
MOSFET 2N-CH 50V 0.43A TSOT26

MOSFET 2N-CH 50V 0.43A TSOT26

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMN52D0UVTQ-13TR-ND
Product Name FET, MOSFET Arrays
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6
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