DIODES Incorporated FET, MOSFET Arrays DMN4026SSDQ-13

MOSFET 2N-CH 40V 7A 8SO

Mosfet Array 2 N-Channel (Dual) 40V 7A 1.3W Surface Mount 8-SO

MOSFET 2N-CH 40V 7A 8SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033772-DMN4026SSDQ-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19.1nC @ 10V
Max Input Capacitance: 1060pF @ 20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 40V 7A 8SO Product overview: DMN4026SSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN4026SSDQ-13 can be used for catalog matching and distributor lookup.