DIODES Incorporated Single FETs, MOSFETs DMN4009LK3-13

N-Channel 40V 18A (Ta) 2.19W (Ta) Surface Mount TO-252-3

MOSFET N-CH 40V 18A TO252-3 Product overview: DMN4009LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 18A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN4009LK3-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 111279-DMN4009LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.19W (Ta)
Family Name: DMN4009LK3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 2072pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPD088N04LGXT; IPD105N04L G; IPD105N04LGXT; IPD088N04LGBTMA1;
Introduction Date: July 09, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance