DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4009LK3-13 DMN4009LK3-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 111279-DMN4009LK3-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.19W (Ta) Family Name: DMN4009LK3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 2072pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPD088N04LGXT; IPD105N04L G; IPD105N04LGXT; IPD088N04LGBTMA1; Introduction Date: July 09, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 111279-DMN4009LK3-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.19W (Ta) Family Name: DMN4009LK3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 2072pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPD088N04LGXT; IPD105N04L G; IPD105N04LGXT; IPD088N04LGBTMA1; Introduction Date: July 09, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4009LK3-13
111279-DMN4009LK3-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4009LK3-13 111279-DMN4009LK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 111279-DMN4009LK3-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.19W (Ta) Family Name: DMN4009LK3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 2072pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPD088N04LGXT; IPD105N04L G; IPD105N04LGXT; IPD088N04LGBTMA1; Introduction Date: July 09, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 111279-DMN4009LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.19W (Ta)
Family Name: DMN4009LK3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 2072pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPD088N04LGXT; IPD105N04L G; IPD105N04LGXT; IPD088N04LGBTMA1;
Introduction Date: July 09, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
40V 18A TO252 MOSFET Transistor
278-DMN4009LK3-13
40V 18A TO252 MOSFET Transistor 278-DMN4009LK3-13
MOSFET N-CH 40V 18A TO252-3 Product overview: DMN4009LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 18A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN4009LK3-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 18A TO252-3 Product overview: DMN4009LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 18A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN4009LK3-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN4009LK3-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN4009LK3-13DITR-ND
Single FETs, MOSFETs DMN4009LK3-13DITR-ND
N-Channel 40V 18A (Ta) 2.19W (Ta) Surface Mount TO-252-3

N-Channel 40V 18A (Ta) 2.19W (Ta) Surface Mount TO-252-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN4009LK3-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN4009LK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN4009LK3-13
MOSFET N-CH 40V 18A TO252-3

MOSFET N-CH 40V 18A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 111279-DMN4009LK3-13 278-DMN4009LK3-13 DMN4009LK3-13DITR-ND DMN4009LK3-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4009LK3-13 40V 18A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 2190 milliwatts 2190 milliwatts
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