DIODES Incorporated Single FETs, MOSFETs DMN39M1LFVW-13

DMN39M1LFVW-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications such as DC-DC converters and backlighting. The package measures 3.30mm x 3.30mm and occupies 33% of the board area of an SO-8 device. It features a low RDS(ON) of 5.0mΩ at VGS=10V and 7.4mΩ at VGS=4.5V, with a continuous drain current of up to 87A at TC=25°C. The device is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability rating. Thermal resistance is 46°C/W on a 2oz copper FR-4 board with thermal pad. It is qualified to AEC-Q100/AEC-Q101/AEC-Q104/AEC-Q200 and manufactured in IATF 16949 certified facilities.