Dual N-channel enhancement mode MOSFET in a SOT363 surface-mount package, designed for low-power switching applications such as battery-operated systems and solid-state relays. Each FET has a drain-source voltage rating of 25 V, with on-resistance of 4 Ω at 4.5 V gate-source voltage and 5 Ω at 2.7 V gate-source voltage. The device features a gate threshold voltage range of 0.65 V to 1.5 V, low input capacitance of 24 pF, and total gate charge of 0.4 nC. It operates from -55 °C to +150 °C and meets UL 94 V-0 flammability rating. The part is RoHS compliant, lead-free, and qualified to AEC-Q200 for automotive applications.
Package: SOT363; dimensions: 2.15 mm × 2.10 mm × 0.95 mm (D × E × A2). Weight: 0.006 grams. Moisture sensitivity: Level 1 per J-STD-020. Packaged in tape and reel, 10,000 units per reel.
MOSFET BVDSS: 25V~30V SOT363 T&R
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN34D0UDW-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |
