Dual N-channel enhancement mode MOSFET in SOT563 package for high-efficiency power management. Drainsource voltage is 30V with continuous drain current of 0.68A at 25°C. On-resistance is 1.2Ω at VGS=4.5V and 1.5Ω at VGS=2.5V. Power dissipation is 480mW with thermal resistance of 261°C/W. Operating temperature range is -55°C to +150°C. Fully RoHS compliant and meet JEDEC reliability standards. Moisture sensitivity level 1 per J-STD-020. Package material has UL 94V-0 flammability rating.
MOSFET 2N-CH 30V 0.68A SOT563
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN32D0LV-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT-563, SOT-666 |
