DIODES Incorporated Single FETs, MOSFETs DMN31D5UFZQ-7B

The DMN31D5UFZQ-7B is an N-channel enhancement mode MOSFET in an X2-DFN0606-3 package, measuring 0.62mm x 0.62mm with a maximum height of 0.4mm, designed for high-efficiency power management and general-purpose switching. It has a drain-source voltage rating of 30V, a gate-source voltage rating of ±12V, and continuous drain current of 0.31A at 25°C. The MOSFET features low on-resistance of 1.5Ω at VGS = 4.5V and 0.62Ω at VGS = 2.5V, with a gate threshold voltage of 0.4V to 1.0V. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability rating. Moisture sensitivity is Level 1 per J-STD-020, and terminals are NiPdAu over copper leadframe with solderability per MIL-STD-202, Method 208 e4. Packaging is 10K per tape and reel.