DIODES Incorporated Single FETs, MOSFETs DMN3066LQ-13

The DMN3066LQ is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications, particularly in automotive systems requiring AEC-Q101 qualification. It is packaged in an SOT23 case with a weight of approximately 0.008 grams and meets moisture sensitivity level 1 per J-STD-020. The device has a drain-source voltage rating of 30 V, a continuous drain current of 3.6 A at 25°C, and a typical on-state resistance of 67 mΩ at VGS = 4.5 V. It features a low gate threshold voltage of 0.5 to 1.5 V, ESD-protected gate, and is RoHS compliant with halogen and antimony-free "Green" designation. Thermal resistance is 154°C/W on a standard PCB and 94°C/W with an additional copper plate. Operating and storage junction temperature ranges from -55°C to +150°C.