DIODES Incorporated Single FETs, MOSFETs DMN3066L-13

The DMN3066L-13 is an N-channel enhancement mode MOSFET in a SOT23 package, designed for high-efficiency power management applications such as load switching. It features a drain-source voltage rating of 30 V, a continuous drain current of 3.6 A at 25°C, and an on-state resistance of 67 mΩ at VGS = 4.5 V and 98 mΩ at VGS = 2.5 V. The gate threshold voltage ranges from 0.5 V to 1.5 V. The device is ESD protected, RoHS compliant, halogen and antimony free, and meets UL 94 V-0 flammability rating. It has a moisture sensitivity level of 1 per J-STD-020 and is qualified for automotive applications under AEC-Q100/101/200. Packaging is tape and reel with 10,000 units per reel.