DIODES Incorporated Single FETs, MOSFETs DMN3060LW-13

The DMN3060LW-13 is an N-channel enhancement mode MOSFET in a SOT323 package, designed for high-efficiency power management applications such as DC-DC converters and analog switching. It features a drain-source voltage rating of 30 V, a continuous drain current of 2.1 A at VGS = 4.5 V with an on-resistance of 100 mΩ, and 2.6 A at VGS = 10 V with 60 mΩ. The device meets AEC-Q100/101/200 qualifications, is RoHS compliant, and rated for operation from -55°C to +150°C. It is packaged in tape and reel format with 10,000 units per reel and is certified to UL 94 V-0 flammability standards. Thermal resistance is 195°C/W on a 2oz copper PCB with thermal bias. The part is halogen- and antimony-free and suitable for automotive applications with IATF 16949 manufacturing control.