DIODES Incorporated FET, MOSFET Arrays DMN3032LFDBQ-13

Mosfet Array 2 N-Channel (Dual) 30V 6.2A (Ta) 1W Surface Mount U-DFN2020-6 (Type B)

MOSFET 2N-CH 30V 6.2A 6UDFN

MOSFET 2N-CH 30V 6.2A 6UDFN

MOSFET 2N-CH 30V 6.2A 6UDFN Product overview: DMN3032LFDBQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3032LFDBQ-13 can be used for catalog matching and distributor lookup.

MOSFET 2NCH 30V 6.2A UDFN2020

Win Source Part Number: 1378263-DMN3032LFDBQ-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Base Product Number: DMN3032
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 1W
Configuration: 2 N-Channel (Dual)