DIODES Incorporated Single FETs, MOSFETs DMN3032L-7

N-channel enhancement mode MOSFET for high-efficiency power-management applications, housed in an SOT23 package measuring 2.90mm x 1.30mm x 0.40mm. It has a 30V drain-source breakdown voltage, maximum continuous drain currents of 5.4A at VGS=10V and 4.5A at VGS=4.5V, and on-resistance of 31mΩ at 10V gate bias and 45mΩ at 4.5V gate bias. The device is RoHS and HALOGEN-free, compliant with AEC-Q100/101/104/200 for automotive applications, and rated for -55°C to +150°C junction temperature. Thermal resistance junction-to-ambient is 93°C/W on a 2oz copper board with thermal bias. Package is molded plastic with UL 94 V-0 flammability rating, moisture sensitivity level 1, and matte tin terminated leads.