MOSFET N-CH 30V 5.3A PWRDI3333-8 Product overview: DMN3027LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3027LFG-7 can be used for catalog matching and distributor lookup.
N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 730590-DMN3027LFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 5.3A
Rds On (Maximum) at Id, Vgs: 18.6mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11.3nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 580pF at 15V
MOSFET, N-CH, 30V, 5.3A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A
MOSFET N-CH 30V 5.3A PWRDI3333-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN3027LFG-7 | DMN3027LFG-7DITR-ND | 730590-DMN3027LFG-7 | 28AK8548 | DMN3027LFG-7 | DMN3027LFG-7 |
| Product Name | 30V 5.3A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - DMN3027LFG-7 | Mosfet, N-Ch, 30V, 5.3A, Powerdi 3333 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 1 milliwatts | 1000 milliwatts |
