DIODES Incorporated Single FETs, MOSFETs DMN3020UFDFQ-7

The DMN3020UFDFQ is a 30V N-channel enhancement mode MOSFET designed for high-efficiency power management applications, including battery management and DC-DC converters. It features a U-DFN2020-6 package with a 4mm² PCB footprint and a 0.6mm profile, making it suitable for low-profile designs. The device has a maximum continuous drain current of 15A at TC = +25°C and RDS(ON) values of 19mΩ at VGS = 4.5V, 25mΩ at VGS = 2.5V, and 40mΩ at VGS = 1.8V. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. The MOSFET is RoHS compliant, halogen- and antimony-free, and has an operating temperature range of -55°C to +150°C. Thermal resistance is 171°C/W on a minimum pad layout and 63°C/W on a 1-inch square copper plate. Gate threshold voltage ranges from 0.4V to 1.0V, with an ESD-protected gate and reverse recovery time of 7.1ns.