The DMN3012LEG-13 is a synchronous N-channel enhancement mode MOSFET designed for high efficiency power management applications, including DC-DC converters. It features a maximum drain-source voltage (BVDSS) of 30V and offers low on-resistance values of 12m,Ѷ and 6m,Ѷ at a gate-source voltage (VGS) of 5V for continuous drain currents of 15A. The device is packaged in a PowerDI3333-8 case and is compliant with RoHS and "Green" standards, indicating it is free from halogens and antimony. The MOSFET supports a continuous drain current of 20A at 25¬8C and has a maximum power dissipation of 2.2W. It exhibits low input capacitance, fast switching speeds, and is suitable for applications requiring high reliability, as evidenced by its 100% unclamped inductive switch (UIS) testing in production. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for various environments. The device is available in tape and reel packaging, facilitating automated assembly processes.
MOSFET 2N-CH 30V 10A PWRDI3333 Product overview: DMN3012LEG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN3012LEG-13 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1378262-DMN3012LEG-1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)
Base Product Number: DMN3012
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Affected
ECCN: EAR99
Power - Max: 2.2W (Tc)
Configuration: 2 N-Channel (Dual)
MOSFET 2N-CH 30V 10A PWRDI3333
Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 20A (Tc) 2.2W (Tc) Surface Mount PowerDI3333-8 (Type D)
MOSFET 2N-CH 30V 10A PWRDI3333
MOSFET 2N-CH 30V 10A PWRDI3333
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN3012LEG-13 | 1378262-DMN3012LEG-13 | 31-DMN3012LEG-13CT-ND | DMN3012LEG-13 | DMN3012LEG-13 |
| Product Name | 30V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | ||||
| PD | 2.2 milliwatts |
