DIODES Incorporated Single FETs, MOSFETs DMN2992UFO-7R

The DMN2992UFO-7R is a 20V N-channel enhancement mode MOSFET in an X2-DFN0604-3 package measuring 0.6mm x 0.4mm, designed for high-efficiency power management and switching applications. It features a maximum drain-source voltage of 20V, a continuous drain current of 530mA at 25°C, and on-resistance values ranging from 0.67Ω to 2.4Ω depending on gate-source voltage. The device has a gate threshold voltage of 1.0V maximum, is ESD protected, and meets RoHS, Halogen- and Antimony-free "Green" requirements. It is qualified to AEC-Q200 and manufactured in IATF 16949 certified facilities. Thermal resistance is 295°C/W with a total power dissipation of 420mW. Operating and storage temperature ranges from -55°C to +150°C. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.