DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UDJ-7 DMN26D0UDJ-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033737-DMN26D0UDJ-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMN26D0UDJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-963 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.05V @ 250μA Max Input Capacitance: 14.1pF @ 15V Maximum Rds On at Id,Vgs: 3 Ohm @ 100mA, 4.5V Alternative Parts (Cross-Reference): CMRDM3590 TR; CMRDM3590; NTUD3128NT5G; Introduction Date: May 25, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033737-DMN26D0UDJ-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMN26D0UDJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-963 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.05V @ 250μA Max Input Capacitance: 14.1pF @ 15V Maximum Rds On at Id,Vgs: 3 Ohm @ 100mA, 4.5V Alternative Parts (Cross-Reference): CMRDM3590 TR; CMRDM3590; NTUD3128NT5G; Introduction Date: May 25, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UDJ-7 - 1033737-DMN26D0UDJ-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UDJ-7
1033737-DMN26D0UDJ-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UDJ-7 1033737-DMN26D0UDJ-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033737-DMN26D0UDJ-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMN26D0UDJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-963 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.05V @ 250μA Max Input Capacitance: 14.1pF @ 15V Maximum Rds On at Id,Vgs: 3 Ohm @ 100mA, 4.5V Alternative Parts (Cross-Reference): CMRDM3590 TR; CMRDM3590; NTUD3128NT5G; Introduction Date: May 25, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033737-DMN26D0UDJ-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN26D0UDJ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-963
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 240mA
Gate-Source Threshold Voltage: 1.05V @ 250μA
Max Input Capacitance: 14.1pF @ 15V
Maximum Rds On at Id,Vgs: 3 Ohm @ 100mA, 4.5V
Alternative Parts (Cross-Reference): CMRDM3590 TR; CMRDM3590; NTUD3128NT5G;
Introduction Date: May 25, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 0.24A MOSFET Transistor
289-DMN26D0UDJ-7
20V 0.24A MOSFET Transistor 289-DMN26D0UDJ-7
MOSFET 2N-CH 20V 0.24A SOT963 Product overview: DMN26D0UDJ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN26D0UDJ-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 0.24A SOT963 Product overview: DMN26D0UDJ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN26D0UDJ-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET DUAL N-CH 20V 0.23A

MOSFET DUAL N-CH 20V 0.23A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN26D0UDJ-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN26D0UDJ-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN26D0UDJ-7
MOSFET 2N-CH 20V 0.24A SOT963

MOSFET 2N-CH 20V 0.24A SOT963

Supplier's Site
FET, MOSFET Arrays - DMN26D0UDJ-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN26D0UDJ-7
FET, MOSFET Arrays DMN26D0UDJ-7
MOSFET 2N-CH 20V 0.24A SOT963

MOSFET 2N-CH 20V 0.24A SOT963

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033737-DMN26D0UDJ-7 289-DMN26D0UDJ-7 DMN26D0UDJ-7 DMN26D0UDJ-7 DMN26D0UDJ-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN26D0UDJ-7 20V 0.24A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 20 volts 20 volts 20 volts
PD 300 milliwatts 300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-963 Tape & Reel (TR) SOT-963
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