DIODES Incorporated Single FETs, MOSFETs DMN2450UFB4Q-7B

The DMN2450UFB4Q is an N-channel enhancement mode MOSFET designed for high-efficiency power management in low-profile applications. It features a compact X2-DFN1006-3 package measuring 0.6 mm² with a 0.4 mm profile, making it suitable for space-constrained designs. The device has a drain-source voltage rating of 20 V, continuous drain currents of 0.9 A at VGS = 2.5 V and 1.0 A at VGS = 4.5 V, and on-resistance values of 0.5 Ω at 2.5 V and 0.4 Ω at 4.5 V. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, with ESD protection and RoHS 3 compliance. Thermal resistance is 129 °C/W with a 25 mm × 25 mm copper pad and 225 °C/W on a minimum pad layout. It operates from -55 °C to +150 °C and meets UL 94V-0 flammability standards.