DIODES Incorporated Single FETs, MOSFETs DMN2310UTQ-13

The DMN2310UTQ is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications such as DC-DC converters and load switches. It is packaged in the ultra-small SOT523 surface-mount package, measuring 1.60 mm in length and 1.60 mm in width, with a maximum height of 0.80 mm. The device features a drain-source voltage rating of 20 V, a continuous drain current of 1.2 A at 25°C, and low on-resistance of 240 mΩ at VGS = 4.5 V and 300 mΩ at VGS = 2.5 V. It includes an ESD-protected gate, operates over a junction temperature range of -55°C to 150°C, and meets AEC-Q100/101/200 qualifications for automotive applications. The package is rated UL 94 V-0, is lead-free and RoHS compliant, and has a thermal resistance of 253 °C/W when mounted on a 2 oz copper FR-4 board with thermal tie.