Manufacturer: Diodes Incorporated
Win Source Part Number: 1324715-DMN2028UFDF-
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.9A
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW
Supplier Device Package: U-DFN2020-6 (Type F)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-UDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: DMN2028UFDF-7DIDKR,D
Base Product Number: DMN2028
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
RoHS Status: ROHS3 Compliant
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
MOSFET N-CH 20V 7.9A 6UDFN
MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A
MOSFET, N-CH, 20V, 7.9A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET N-CH 20V 7.9A 6UDFN
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1324715-DMN2028UFDF-7 | DMN2028UFDF-7DITR-ND | DMN2028UFDF-7 | DMN2028UFDF-7 | 28AK8496 | DMN2028UFDF-7 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 7.9A, U-Dfn2020 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 660 milliwatts | 660 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | TO-3 | 6-UDFN Exposed Pad |
