MOSFET 2N-CH 20V 5.2A 8DFN Product overview: DMN2016LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN2016LFG-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 5.2A 8UDFN
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 770mW Surface Mount U-DFN3030-8
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 770mW Surface Mount U-DFN3030-8
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 770mW Surface Mount U-DFN3030-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 014414-DMN2016LFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN3030-8
Maximum Power Dissipation: 770mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.2A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1472pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 5.2A 8DFN
MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN2016LFG-7 | DMN2016LFG-7 | DMN2016LFG-7DIDKR-ND | 014414-DMN2016LFG-7 | DMN2016LFG-7 | DMN2016LFG-7 |
| Product Name | 20V 5.2A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2016LFG-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) Common Drain | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| PD | 770 milliwatts | 770 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
