The DMN2013UFDE-7 is a 20V N-channel enhancement mode MOSFET in a U-DFN2020-6 package with a 4mm² PCB footprint and a 0.6mm profile, designed for low-profile applications. It features a gate threshold voltage of 0.5V to 1.1V and an on-resistance of 11mΩ at VGS=4.5V and 10.5A drain current. The device is ESD protected, RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q101 standards. It has a thermal resistance of 43°C/W when mounted on a PCB with a 1-inch square copper plate and operates across a junction temperature range of -55°C to +150°C.
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.1V; Power Dissipation:660mW; No. of Pins:6PinsRoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 60AC8795 |
| Product Name | Channel Type Diodes Inc. |
| Package Type | TO-3 |
