DIODES Incorporated FET, MOSFET Arrays DMN10H6D0LFDB-7

The DMN10H6D0LFDB-7 is a dual N-channel enhancement mode MOSFET in a U-DFN2020-6 package, designed for high-efficiency power-management applications such as small servo motor control and power MOSFET gate drivers. It features a drain-source voltage rating of 100 V, a continuous drain current of 0.27 A at 25°C, and a static drain-source on-resistance of 6 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. The device is ESD protected, RoHS compliant, and meets UL 94 V-0 flammability standards. It is qualified for automotive applications per AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities. The part is supplied in tape and reel packaging with 3,000 units per reel.