MOSFET N-CH 100V 3.8A PWRDI3333 Product overview: DMN10H120SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H120SFG-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033712-DMN10H120SFG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.6nC @ 10V
Max Input Capacitance: 549pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8
MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
MOSFET N-CH 100V 3.8A PWRDI3333
MOSFET N-CH 100V 3.8A PWRDI3333
MOSFET, N-CH, 100V, 3.8A, POWERDI 3333 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN10H120SFG-7 | 1033712-DMN10H120SFG-7 | DMN10H120SFG-7DICT-ND | DMN10H120SFG-7 | DMN10H120SFG-7 | DMN10H120SFG-7 | 32AK9130 |
| Product Name | 100V 3.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H120SFG-7 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 3.8A, Powerdi 3333 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 1 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
