MOSFET N-CH 100V 18A TO252 Product overview: DMN10H100SK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H100SK3-13 can be used for catalog matching and distributor lookup.
N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252-3
N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252-3
N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033709-DMN10H100SK3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25.2nC @ 10V
Max Input Capacitance: 1172pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 18A TO252
MOSFET N-CH 100V 18A TO252
MOSFET N-CH 100V 18A TO252
100V 18A 80mΩ@3.3A,10V 37W 3V@250uA N Channel TO-252 MOSFETs ROHS
MOSFET 100V N-Ch Enh FET 100mOhm 3V
MOSFET, N-CH, 100V, 18A, TO-252 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN10H100SK3-13 | DMN10H100SK3-13DIDKR-ND | 1033709-DMN10H100SK3-13 | DMN10H100SK3-13 | 233-DMN10H100SK3-13 | DMN10H100SK3-13 | DMN10H100SK3-13 | DMN10H100SK3-13 | 28AK8458 |
| Product Name | 100V 18A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H100SK3-13 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 18A TO252 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 18A, To-252 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 37 milliwatts | 37000 milliwatts | 37000 milliwatts | 37000 milliwatts | 37000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
