MOSFET N-CH 12V 9.3A SC59
MOSFET N-CH 12V 9.3A SC59 Product overview: DMN1019USN-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1019USN-13 can be used for catalog matching and distributor lookup.
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 917142-DMN1019USN-13
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 12 V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN1019
Categories: Discrete Semiconductor Products
Case / Package: SC-59-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 10000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: DMN1019USN-13DITR, DMN1019USN-13DICT, DMN1019USN-13DIDKR
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power RoHS Compliant: Yes
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power RoHS Compliant: Yes
MOSFET N-CH 12V 9.3A SC59
MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN1019USN-13 | 278-DMN1019USN-13 | DMN1019USN-13DITR-ND | 917142-DMN1019USN-13 | 07AH3759 | DMN1019USN-13 | DMN1019USN-13 |
| Product Name | Single FETs, MOSFETs | 12V 9.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019USN-13 | Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 12 volts | 12 volts | |||||
| IDSS | 9300 milliamps | 9300 milliamps | |||||
| PD | 680 milliwatts | 1.2 milliwatts |
