MOSFET N-CH 30V 5.3A SOT26
MOSFET N-CH 30V 5.3A SOT26 Product overview: DMG6402LDM-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG6402LDM-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 014391-DMG6402LDM-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.12W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 404pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): FDC655BN; STT6N3LLH6; DMG6402LDM-7; DMN3033LDM;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26
N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26
N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26
MOSFET, N-CH, 30V, 5.3A, SOT-26 ROHS COMPLIANT: YES
MOSFET N-CH 30V 5.3A SOT26
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMG6402LDM-7 | 278-DMG6402LDM-7 | 014391-DMG6402LDM-7 | DMG6402LDM-7DIDKR-ND | DMG6402LDM-7 | 32AK9128 | DMG6402LDM-7 |
| Product Name | Single FETs, MOSFETs | 30V 5.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6402LDM-7 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 5.3A, Sot-26 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 5300 milliamps | ||||||
| PD | 1120 milliwatts | 1.12 milliwatts | 1120 milliwatts |