DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6402LDM-7 DMG6402LDM-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 014391-DMG6402LDM-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.12W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 404pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): FDC655BN; STT6N3LLH6; DMG6402LDM-7; DMN3033LDM;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 5.3A SOT26

N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26

N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26

N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26