N-Channel 600V 3A (Tc) 41W (Tc) Through Hole TO-251
Manufacturer: Diodes Incorporated
Win Source Part Number: 917137-DMG4N60SJ3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 3A (Tc) 41W (Tc) Through Hole TO-251
Package: Tube
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-251
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 75
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 3A TO251 Product overview: DMG4N60SJ3 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG4N60SJ3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 3A TO251
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMG4N60SJ3-ND | 917137-DMG4N60SJ3 | 278-DMG4N60SJ3 | DMG4N60SJ3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4N60SJ3 | 600V 3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |