MOSFET 2N-CH 30V 7.5A 8SO Product overview: DMG4800LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG4800LSD-13 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 014390-DMG4800LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.17W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 8.56nC @ 5V
Max Input Capacitance: 798pF @ 10V
Maximum Rds On at Id,Vgs: 16 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO
MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET 2N-CH 30V 7.5A 8SO
MOSFET 2N-CH 30V 7.5A 8SO
MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMG4800LSD-13 | 014390-DMG4800LSD-13 | DMG4800LSD-13DITR-ND | 82Y6567 | DMG4800LSD-13 | DMG4800LSD-13 | DMG4800LSD-13 |
| Product Name | 30V 7.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc. | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.17 milliwatts | 1170 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
