DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 DMG4800LSD-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014390-DMG4800LSD-13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.17W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 8.56nC @ 5V Max Input Capacitance: 798pF @ 10V Maximum Rds On at Id,Vgs: 16 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 - 014390-DMG4800LSD-13 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - DMG4800LSD-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - DMG4800LSD-13DITR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - DMG4800LSD-13DIDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - DMG4800LSD-13DICT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG4800LSD-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc. - 82Y6567 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014390-DMG4800LSD-13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.17W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 8.56nC @ 5V Max Input Capacitance: 798pF @ 10V Maximum Rds On at Id,Vgs: 16 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 - 014390-DMG4800LSD-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13
014390-DMG4800LSD-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 014390-DMG4800LSD-13
Manufacturer: Diodes Incorporated Win Source Part Number: 014390-DMG4800LSD-13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.17W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 8.56nC @ 5V Max Input Capacitance: 798pF @ 10V Maximum Rds On at Id,Vgs: 16 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 014390-DMG4800LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.17W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 8.56nC @ 5V
Max Input Capacitance: 798pF @ 10V
Maximum Rds On at Id,Vgs: 16 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - DMG4800LSD-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMG4800LSD-13
FET, MOSFET Arrays DMG4800LSD-13
MOSFET 2N-CH 30V 7.5A 8SO

MOSFET 2N-CH 30V 7.5A 8SO

Supplier's Site Datasheet
FET, MOSFET Arrays - DMG4800LSD-13DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG4800LSD-13DITR-ND
FET, MOSFET Arrays DMG4800LSD-13DITR-ND
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - DMG4800LSD-13DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG4800LSD-13DIDKR-ND
FET, MOSFET Arrays DMG4800LSD-13DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - DMG4800LSD-13DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG4800LSD-13DICT-ND
FET, MOSFET Arrays DMG4800LSD-13DICT-ND
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Surface Mount 8-SO

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMG4800LSD-13
MOSFET DMG4800LSD-13
MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM

MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG4800LSD-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG4800LSD-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG4800LSD-13
MOSFET 2N-CH 30V 7.5A 8SO

MOSFET 2N-CH 30V 7.5A 8SO

Supplier's Site
Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc. - 82Y6567 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc.
82Y6567
Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc. 82Y6567
MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 014390-DMG4800LSD-13 DMG4800LSD-13 DMG4800LSD-13DITR-ND DMG4800LSD-13 DMG4800LSD-13 82Y6567
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4800LSD-13 FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 30V, Soic-8; Transistor Polarity Diodes Inc.
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 1170 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SOP 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3
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