DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX DMG2305UX

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX - 09667-DMG2305UX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX
09667-DMG2305UX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX 09667-DMG2305UX
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 09667-DMG2305UX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 10.2nC @ 4.5V
Max Input Capacitance: 808pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 4.2A SOT23 MOSFET Transistor
285-DMG2305UX
20V 4.2A SOT23 MOSFET Transistor 285-DMG2305UX
MOSFET P-CH 20V 4.2A SOT23 Product overview: DMG2305UX from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-DMG2305UX can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 4.2A SOT23 Product overview: DMG2305UX from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-DMG2305UX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 09667-DMG2305UX 285-DMG2305UX
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX 20V 4.2A SOT23 MOSFET Transistor
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 1400 milliwatts 1400 milliwatts
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