DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX DMG2305UX

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX - 09667-DMG2305UX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX
09667-DMG2305UX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX 09667-DMG2305UX
Manufacturer: Diodes Incorporated Win Source Part Number: 09667-DMG2305UX Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 10.2nC @ 4.5V Max Input Capacitance: 808pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 09667-DMG2305UX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 10.2nC @ 4.5V
Max Input Capacitance: 808pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 52 mOhm @ 4.2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 09667-DMG2305UX
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2305UX
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 1400 milliwatts
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