Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563
Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563
Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563
MOSFET N/P-CH 60V SOT563
MOSFET N/P-CH 60V 0.5A SOT563 Product overview: DMG1029SV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1029SV-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033663-DMG1029SV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMG1029SV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 500mA, 360mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.3nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI1029X-T1-E3; Si1029X-T1; Si1029X-E3; Si1029X;
Introduction Date: August 02, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
MOSFET N/P-CH 60V 0.5A SOT563
MOSFET, N & P CH, 60V, SOT-563; Transistor Polarity:N and P Complement; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
60V 1.7Ω@500mA,10V 450mW 2.5V@250uA 1PCSN-Channel&1PCSP-
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG1029SV-7DICT-ND | DMG1029SV-7 | 289-DMG1029SV-7 | 1033663-DMG1029SV-7 | DMG1029SV-7 | DMG1029SV-7 | 82Y6561 | DMG1029SV-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 60V 0.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N & P Ch, 60V, Sot-563; Transistor Polarity Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | Tape & Reel (TR) | SOT3; SOT-563 | TO-3 | |||
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 500 milliamps | 500 milliamps |
