DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7 DMG1029SV-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033663-DMG1029SV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG1029SV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 500mA, 360mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.3nC @ 4.5V Max Input Capacitance: 30pF @ 25V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): SI1029X-T1-E3; Si1029X-T1; Si1029X-E3; Si1029X; Introduction Date: August 02, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033663-DMG1029SV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG1029SV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 500mA, 360mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.3nC @ 4.5V Max Input Capacitance: 30pF @ 25V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): SI1029X-T1-E3; Si1029X-T1; Si1029X-E3; Si1029X; Introduction Date: August 02, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7 - 1033663-DMG1029SV-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7
1033663-DMG1029SV-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7 1033663-DMG1029SV-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033663-DMG1029SV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG1029SV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 500mA, 360mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.3nC @ 4.5V Max Input Capacitance: 30pF @ 25V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): SI1029X-T1-E3; Si1029X-T1; Si1029X-E3; Si1029X; Introduction Date: August 02, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033663-DMG1029SV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMG1029SV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 500mA, 360mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.3nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI1029X-T1-E3; Si1029X-T1; Si1029X-E3; Si1029X;
Introduction Date: August 02, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - DMG1029SV-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1029SV-7DICT-ND
FET, MOSFET Arrays DMG1029SV-7DICT-ND
Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1029SV-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1029SV-7DITR-ND
FET, MOSFET Arrays DMG1029SV-7DITR-ND
Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1029SV-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1029SV-7DIDKR-ND
FET, MOSFET Arrays DMG1029SV-7DIDKR-ND
Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Mosfet Array N and P-Channel 60V 500mA, 360mA 450mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1029SV-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMG1029SV-7
FET, MOSFET Arrays DMG1029SV-7
MOSFET N/P-CH 60V SOT563

MOSFET N/P-CH 60V SOT563

Supplier's Site Datasheet
Singapore
60V 0.5A MOSFET Transistor
289-DMG1029SV-7
60V 0.5A MOSFET Transistor 289-DMG1029SV-7
MOSFET N/P-CH 60V 0.5A SOT563 Product overview: DMG1029SV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1029SV-7 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 60V 0.5A SOT563 Product overview: DMG1029SV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1029SV-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA

MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMG1029SV-7
Triode/MOS Tube/Transistor >> MOSFETs DMG1029SV-7
60V 1.7Ω@500mA,10V 450mW 2.5V@250uA 1PCSN-Channel&1PCSP- Channel SOT-563 MOSFETs ROHS

60V 1.7Ω@500mA,10V 450mW 2.5V@250uA 1PCSN-Channel&1PCSP-Channel SOT-563 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG1029SV-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG1029SV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG1029SV-7
MOSFET N/P-CH 60V 0.5A SOT563

MOSFET N/P-CH 60V 0.5A SOT563

Supplier's Site
Mosfet, N & P Ch, 60V, Sot-563; Transistor Polarity Diodes Inc. - 82Y6561 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Ch, 60V, Sot-563; Transistor Polarity Diodes Inc.
82Y6561
Mosfet, N & P Ch, 60V, Sot-563; Transistor Polarity Diodes Inc. 82Y6561
MOSFET, N & P CH, 60V, SOT-563; Transistor Polarity:N and P Complement; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

MOSFET, N & P CH, 60V, SOT-563; Transistor Polarity:N and P Complement; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033663-DMG1029SV-7 DMG1029SV-7DICT-ND DMG1029SV-7 289-DMG1029SV-7 DMG1029SV-7 DMG1029SV-7 DMG1029SV-7 82Y6561
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1029SV-7 FET, MOSFET Arrays FET, MOSFET Arrays 60V 0.5A MOSFET Transistor MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N & P Ch, 60V, Sot-563; Transistor Polarity Diodes Inc.
Polarity P-Channel P-Channel; N and P-Channel N-Channel; P-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
PD 450 milliwatts 450 milliwatts 450 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-563 SOT-563, SOT-666 SOT-563, SOT-666 Tape & Reel (TR) TO-3
Unlock Full Specs
to access all available technical data