Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563
Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563
Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563
MOSFET 2P-CH 20V 1.03A SOT563
MOSFET 2P-CH 20V 1.03A SOT563 Product overview: DMG1023UV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.03A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.03A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1023UV-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 014374-DMG1023UV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMG1023UV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 530mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.03A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.62nC @ 4.5V
Max Input Capacitance: 59.76pF @ 16V
Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V
Alternative Parts (Cross-Reference): PMDT670UPE; PMDT670UPE,115; AO5803E; CMLDM5757 TR Lead Free;
Introduction Date: December 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
MOSFET 2P-CH 20V 1.03A SOT563
MOSFET, DUAL P CH, -20V, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.03A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG1023UV-7DITR-ND | DMG1023UV-7 | 289-DMG1023UV-7 | 014374-DMG1023UV-7 | DMG1023UV-7 | 82Y6560 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 1.03A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual P Ch, -20V, Sot-563; Transistor Polarity Diodes Inc. |
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | Tape & Reel (TR) | SOT3; SOT-563 | TO-3 | |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| IDSS | 1030 milliamps | -1030 milliamps |
