DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7 DMG1023UV-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014374-DMG1023UV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMG1023UV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 530mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.03A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.62nC @ 4.5V Max Input Capacitance: 59.76pF @ 16V Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V Alternative Parts (Cross-Reference): PMDT670UPE; PMDT670UPE,115; AO5803E; CMLDM5757 TR Lead Free; Introduction Date: December 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014374-DMG1023UV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMG1023UV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 530mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.03A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.62nC @ 4.5V Max Input Capacitance: 59.76pF @ 16V Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V Alternative Parts (Cross-Reference): PMDT670UPE; PMDT670UPE,115; AO5803E; CMLDM5757 TR Lead Free; Introduction Date: December 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7 - 014374-DMG1023UV-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7
014374-DMG1023UV-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7 014374-DMG1023UV-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014374-DMG1023UV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMG1023UV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 530mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.03A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.62nC @ 4.5V Max Input Capacitance: 59.76pF @ 16V Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V Alternative Parts (Cross-Reference): PMDT670UPE; PMDT670UPE,115; AO5803E; CMLDM5757 TR Lead Free; Introduction Date: December 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014374-DMG1023UV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMG1023UV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 530mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.03A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.62nC @ 4.5V
Max Input Capacitance: 59.76pF @ 16V
Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V
Alternative Parts (Cross-Reference): PMDT670UPE; PMDT670UPE,115; AO5803E; CMLDM5757 TR Lead Free;
Introduction Date: December 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - DMG1023UV-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMG1023UV-7
FET, MOSFET Arrays DMG1023UV-7
MOSFET 2P-CH 20V 1.03A SOT563

MOSFET 2P-CH 20V 1.03A SOT563

Supplier's Site Datasheet
Singapore
20V 1.03A MOSFET Transistor
289-DMG1023UV-7
20V 1.03A MOSFET Transistor 289-DMG1023UV-7
MOSFET 2P-CH 20V 1.03A SOT563 Product overview: DMG1023UV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.03A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.03A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1023UV-7 can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 20V 1.03A SOT563 Product overview: DMG1023UV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.03A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.03A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1023UV-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - DMG1023UV-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1023UV-7DITR-ND
FET, MOSFET Arrays DMG1023UV-7DITR-ND
Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1023UV-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1023UV-7DIDKR-ND
FET, MOSFET Arrays DMG1023UV-7DIDKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1023UV-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1023UV-7DICT-ND
FET, MOSFET Arrays DMG1023UV-7DICT-ND
Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Surface Mount SOT-563

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG1023UV-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG1023UV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG1023UV-7
MOSFET 2P-CH 20V 1.03A SOT563

MOSFET 2P-CH 20V 1.03A SOT563

Supplier's Site
Mosfet, Dual P Ch, -20V, Sot-563; Transistor Polarity Diodes Inc. - 82Y6560 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P Ch, -20V, Sot-563; Transistor Polarity Diodes Inc.
82Y6560
Mosfet, Dual P Ch, -20V, Sot-563; Transistor Polarity Diodes Inc. 82Y6560
MOSFET, DUAL P CH, -20V, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.03A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, DUAL P CH, -20V, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.03A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 014374-DMG1023UV-7 DMG1023UV-7 289-DMG1023UV-7 DMG1023UV-7DITR-ND DMG1023UV-7 82Y6560
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1023UV-7 FET, MOSFET Arrays 20V 1.03A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual P Ch, -20V, Sot-563; Transistor Polarity Diodes Inc.
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 530 milliwatts 530 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-563 SOT-563, SOT-666 Tape & Reel (TR) SOT-563, SOT-666 TO-3
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