MOSFET N/P-CH 20V 0.87A SOT563 Product overview: DMG1016V-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.87A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.87A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG1016V-7 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 20V SOT563
Mosfet Array N and P-Channel 20V 870mA, 640mA 530mW Surface Mount SOT-563
Mosfet Array N and P-Channel 20V 870mA, 640mA 530mW Surface Mount SOT-563
Mosfet Array N and P-Channel 20V 870mA, 640mA 530mW Surface Mount SOT-563
Manufacturer: Diodes Incorporated
Win Source Part Number: 014373-DMG1016V-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 530mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 870mA, 640mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.74nC @ 4.5V
Max Input Capacitance: 60.67pF @ 16V
Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): NTZD3155CT1G; DMG1016V; CMLDM3757 TR Lead Free;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563
MOSFET, N & P CH, 20V/-20V, SOT-563; Transistor Polarity:N and P Complement; Continuous Drain Current Id:870mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; RoHS Compliant: Yes
MOSFET N/P-CH 20V 0.87A SOT563
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMG1016V-7 | DMG1016V-7 | DMG1016V-7DITR-ND | 014373-DMG1016V-7 | DMG1016V-7 | 82Y6559 | DMG1016V-7 |
| Product Name | 20V 0.87A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1016V-7 | MOSFET | Mosfet, N & P Ch, 20V/-20V, Sot-563; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 530 milliwatts | 530 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
