Mosfet Array N and P-Channel Complementary 20V 750mA (Ta), 600mA (Ta) 290mW (Ta) Surface Mount SOT-363
MOSFET N/P-CH 20V 0.75A SOT363
MOSFET N/P-CH 20V 0.75A SOT363
MOSFET BVDSS: 8V-24V SOT363
Win Source Part Number: 1376911-DMC2710UDW-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Product Number: DMC2710
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 290mW (Ta)
Configuration: N and P-Channel Complementary
MOSFET, DUAL, N/P-CH, 20V, 0.75A ROHS COMPLIANT: YES
MOSFET N/P-CH 20V 0.75A SOT363
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 31-DMC2710UDW-7TR-ND | DMC2710UDW-7 | 1376911-DMC2710UDW-7 | 28AK8371 | DMC2710UDW-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | Mosfet, Dual, N/p-Ch, 20V, 0.75A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3 | TO-3 | |
| Polarity | P-Channel; N and P-Channel Complementary | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts |