DIODES Incorporated Single, Pre-Biased Bipolar Transistors DDTC115ECA-7

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

TRANS PREBIAS NPN 50V SOT23-3 Product overview: DDTC115ECA-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTC115ECA-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1325683-DDTC115ECA-7
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250 MHz
Supplier Device Package: SOT-23-3
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 67
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: DDTC115ECA7,DDTC115ECADITR,DDTC115ECADICT
Base Product Number: DDTC115
RoHS Status: RoHS non-compliant