Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363
Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363
Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1024535-BSS8402DWQ-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 60V, 50V
Continuous Drain Current at 25°C: 115mA, 130mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Rds On at Id,Vgs: 13.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 60V/50V
MOSFET N/P-CH 60V/50V SOT363 Product overview: BSS8402DWQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSS8402DWQ-7 can be used for catalog matching and distributor lookup.
200mW 13.5Ω@500mA,10V 2.5V@250uA P Channel SOT-363 MOSFETs ROHS
MOSFET N/P-CH 60V/50V SOT363
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 31-BSS8402DWQ-7TR-ND | 1024535-BSS8402DWQ-7 | BSS8402DWQ-7 | 289-BSS8402DWQ-7 | 233-BSS8402DWQ-7 | BSS8402DWQ-7 | BSS8402DWQ-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS8402DWQ-7 | FET, MOSFET Arrays | 60V 50V MOSFET Transistor | MOSFET N/P-CH 60V/50V | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SOT-363 | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | 6-TSSOP, SC-88, SOT-363 | ||
| Polarity | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | P-Channel | |||
| V(BR)DSS | 60 to 50 volts | 60 to 50 volts | 60 volts | 60 volts | 60 volts | ||
| PD | 200 milliwatts | 200 milliwatts | 200 milliwatts | 200 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
