Manufacturer: Diodes Incorporated
Win Source Part Number: 012117-BS170P
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92
MOSFET, N CHANNEL, 60V, 270mA, E-LINE; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 60V 270MA TO92-3
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 012117-BS170P | BS170P-ND | 96K7122 | BS170P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BS170P | Single FETs, MOSFETs | Mosfet, N Channel, 60V, 270Ma, E-Line; Channel Type Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | |||
| PD | 625 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
