DIODES Incorporated Single Bipolar Transistors BC857BFHWQ-7

The BC857BFHWQ-7 is a PNP silicon bipolar junction transistor in a U-DFN1110-3 package, measuring 1.1 mm by 1.0 mm with a height of 0.6 mm, designed for automotive switching and amplification applications. It has a collector-emitter voltage rating of -45 V and a continuous collector current of -100 mA. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. It features a wettable flank for AOI, is fully RoHS compliant, and has an operating temperature range of -55°C to +150°C. Power dissipation is 420 mW, with a thermal resistance junction-to-ambient of 298 °C/W.