DIODES Incorporated Single Bipolar Transistors BC857BFHW-7

PNP silicon transistor in U-DFN1110-3/SWP package, 1.10 mm x 1.00 mm x 0.52 mm, for switching and amplification applications. Rated for collector-emitter voltage up to -45 V and continuous collector current of -100 mA. Power dissipation is 420 mW with thermal resistance from junction to ambient of 298 °C/W. Operating and storage temperature range is -55 °C to +150 °C. RoHS compliant, halogen and antimony free, with wettable flanks for AOI. Qualified to AEC-Q100 and manufactured in IATF 16949 certified facilities. ESD protection: HBM 4000 V (Class 3A), CDM 1000 V (Class C3).