DIODES Incorporated Single Bipolar Transistors BC856AFHW-7

PNP silicon transistor for switching and amplification applications in a U-DFN1110-3/SWP (Type A) package, measuring 1.10 mm x 1.00 mm with a height of 0.60 mm. Collector-emitter voltage rating of -65 V, collector current up to -100 mA, and power dissipation of 420 mW. Features wettable flanks with sidewall tin plating, thermal resistance of 298 °C/W, and operates from -55 °C to +150 °C. Meets AEC-Q100/101/104/200 qualifications, is RoHS compliant, and has UL 94 V-0 flammability rating.