DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002V-7 2N7002V-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 104628-2N7002V-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 280mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Dual) 60V 280mA 150mW Surface Mount SOT-563

MOSFET 2N-CH 60V 0.28A SOT563 Product overview: 2N7002V-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.28A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-2N7002V-7 can be used for catalog matching and distributor lookup.