MOSFET N-CH 60V 180MA SOT23
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 60V 180MA SOT23 Product overview: 2N7002A-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 180MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 180MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002A-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 005718-2N7002A-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180mA (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 23pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
MOSFET N-CHANNEL ENHANCEMENT MODE
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 60V 180MA SOT23
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002A-7 | 2N7002A-7DITR-ND | 278-2N7002A-7 | 005718-2N7002A-7 | 2N7002A-7 | 07AH5030 | 2N7002A-7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 180MA SOT23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 | MOSFET | Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 180 milliamps | 180 milliamps | |||||
| PD | 370 milliwatts | 540 milliwatts | 370 milliwatts |
