DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 2N7002A-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005718-2N7002A-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Input Capacitance: 23pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 - 005718-2N7002A-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 2N7002A-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 2N7002A-7DICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 2N7002A-7DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 2N7002A-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002A-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. - 07AH5030 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. - 07AH5031 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005718-2N7002A-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Input Capacitance: 23pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 - 005718-2N7002A-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7
005718-2N7002A-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 005718-2N7002A-7
Manufacturer: Diodes Incorporated Win Source Part Number: 005718-2N7002A-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 180mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Input Capacitance: 23pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 005718-2N7002A-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180mA (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 23pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002A-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002A-7DITR-ND
Single FETs, MOSFETs 2N7002A-7DITR-ND
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002A-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002A-7DICT-ND
Single FETs, MOSFETs 2N7002A-7DICT-ND
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002A-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002A-7DIDKR-ND
Single FETs, MOSFETs 2N7002A-7DIDKR-ND
N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002A-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7002A-7
Single FETs, MOSFETs 2N7002A-7
MOSFET N-CH 60V 180MA SOT23

MOSFET N-CH 60V 180MA SOT23

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002A-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002A-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002A-7
MOSFET N-CH 60V 180MA SOT23

MOSFET N-CH 60V 180MA SOT23

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
2N7002A-7
MOSFET 2N7002A-7
MOSFET N-CHANNEL ENHANCEMENT MODE

MOSFET N-CHANNEL ENHANCEMENT MODE

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. - 07AH5030 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc.
07AH5030
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. 07AH5030
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. - 07AH5031 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc.
07AH5031
Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc. 07AH5031
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 005718-2N7002A-7 2N7002A-7DITR-ND 2N7002A-7 2N7002A-7 2N7002A-7 07AH5030
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002A-7 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.18A, Sot-23; Transistor Polarity Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 370 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23
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