DigiKey Single FETs, MOSFETs 4530-BSS84DKR-ND

Description
P-CHANNEL ENHANCEMENT MODE MOSFE
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Description
P-CHANNEL ENHANCEMENT MODE MOSFE
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Datasheet
Datasheet Summary
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The BSS84 is a P-channel MOSFET designed for low-power switching applications in surface mount designs. It is packaged in a SOT-23 case measuring 2.8 to 3.0 mm in length, 1.2 to 1.4 mm in width, and 0.9 to 1.1 mm in height. The device has a drain-source voltage rating of 50 V, a continuous drain current of 0.13 A, and a power dissipation of 225 mW. The gate-source voltage is rated at ±20 V, with a gate threshold voltage range of 0.9 to 2 V. Thermal resistance from junction to ambient is 556 °C/W. It features ESD protection up to 2 kV HBM and operates over a junction temperature range from -55 °C to 150 °C.

Datasheet Summary
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The BSS84 is a P-channel MOSFET designed for low-power switching applications in surface mount designs. It is packaged in a SOT-23 case measuring 2.8 to 3.0 mm in length, 1.2 to 1.4 mm in width, and 0.9 to 1.1 mm in height. The device has a drain-source voltage rating of 50 V, a continuous drain current of 0.13 A, and a power dissipation of 225 mW. The gate-source voltage is rated at ±20 V, with a gate threshold voltage range of 0.9 to 2 V. Thermal resistance from junction to ambient is 556 °C/W. It features ESD protection up to 2 kV HBM and operates over a junction temperature range from -55 °C to 150 °C.

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Single FETs, MOSFETs - 4530-BSS84DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
4530-BSS84DKR-ND
Single FETs, MOSFETs 4530-BSS84DKR-ND
P-CHANNEL ENHANCEMENT MODE MOSFE

P-CHANNEL ENHANCEMENT MODE MOSFE

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4530-BSS84DKR-ND
Product Name Single FETs, MOSFETs
Polarity P-Channel
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