D3 Semiconductor, LLC MOSFET D3S080N65E-T

Description
MOSFET 80 mOhm 650V
Description
MOSFET 80 mOhm 650V
Datasheet
Datasheet Summary
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The D3S080N65 series is a super junction MOSFET designed for high-efficiency power conversion in applications such as server and telecom power supplies, motor control, and power factor correction. It features a maximum drain-source voltage of 710 V, a drain current rating of 40.8 A at 25°C, and a maximum on-resistance of 80 mΩ. The device has a gate charge of 77 nC and supports single-pulse avalanche energy of 650 mJ. It is available in TO-263 package and operates with a junction temperature range of -55°C to 150°C. The MOSFET meets JESD-22 reliability test standards and has a maximum gate-source voltage of ±30 V.

Datasheet Summary
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The D3S080N65 series is a super junction MOSFET designed for high-efficiency power conversion in applications such as server and telecom power supplies, motor control, and power factor correction. It features a maximum drain-source voltage of 710 V, a drain current rating of 40.8 A at 25°C, and a maximum on-resistance of 80 mΩ. The device has a gate charge of 77 nC and supports single-pulse avalanche energy of 650 mJ. It is available in TO-263 package and operates with a junction temperature range of -55°C to 150°C. The MOSFET meets JESD-22 reliability test standards and has a maximum gate-source voltage of ±30 V.

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Sheung Wan, Hong Kong
MOSFET 80 mOhm 650V

MOSFET 80 mOhm 650V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number D3S080N65E-T
Product Name MOSFET
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