Cypress Semiconductor Corp. Memory S34MS02G100BHI000

Description
FLASH, 256MX8, 45NS, PBGA63
Request a Quote Datasheet
Description
FLASH, 256MX8, 45NS, PBGA63
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FLASH, 256MX8, 45NS, PBGA63

FLASH, 256MX8, 45NS, PBGA63

Supplier's Site Datasheet
 - S34MS02G100BHI000 - Rochester Electronics
Newburyport, MA, United States
Flash, 256MX8, 45ns, PBGA63

Flash, 256MX8, 45ns, PBGA63

Supplier's Site Datasheet
Memory - Flash - S34MS02G100BHI000 - 1093652-S34MS02G100BHI000 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - S34MS02G100BHI000
1093652-S34MS02G100BHI000
Memory - Flash - S34MS02G100BHI000 1093652-S34MS02G100BHI000
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1093652-S34MS02G100B HI000 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-BGA (11x9) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Alternative Parts (Cross-Reference): NAND02GR4BADZA6F; NAND02GR4BADZA6E; MT29F2G08ABBEAH4ITMS :E; ECCN: 3A991.b.1.a Country of Origin: Thailand Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 1093652-S34MS02G100BHI000
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Access Time: 45ns
Family Name: S34MS02G1
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-BGA (11x9)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): NAND02GR4BADZA6F; NAND02GR4BADZA6E; MT29F2G08ABBEAH4ITMS:E;
ECCN: 3A991.b.1.a
Country of Origin: Thailand
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - S34MS02G100BHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Rochester Electronics Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S34MS02G100BHI000 S34MS02G100BHI000 1093652-S34MS02G100BHI000 S34MS02G100BHI000
Product Name Memory Memory - Flash - S34MS02G100BHI000 Memory
Memory Category Flash; FLASH - NAND Flash Flash; FLASH Flash; FLASH
Access Time 45 ns 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C1008ECA55L883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
FIFOs Memory - 4703BDM - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - IS29GL01GS-11DHV02-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details