Cypress Semiconductor Corp. Memory S34MS01G100BHI900

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

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Company
Product
Description
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Memory - S34MS01G100BHI900 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

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Integrated Circuits (ICs) - Memory - Memory - S34MS01G100BHI900 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS01G100BHI900
Integrated Circuits (ICs) - Memory - Memory S34MS01G100BHI900
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS01G100BHI900 S34MS01G100BHI900
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits
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