Cypress Semiconductor Corp. Memory S34MS01G100BHI900

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Suppliers

Company
Product
Description
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Memory - S34MS01G100BHI900 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

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Integrated Circuits (ICs) - Memory - Memory - S34MS01G100BHI900 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS01G100BHI900
Integrated Circuits (ICs) - Memory - Memory S34MS01G100BHI900
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS01G100BHI900 S34MS01G100BHI900
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits
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