Cypress Semiconductor Corp. Memory S34ML04G100TFV000

Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP
Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP
Datasheet
Datasheet Summary
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The S34ML04G100TFV000 is a 4 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a 3.3 V supply voltage with a range of 2.7 V to 3.6 V. The device supports an 8-bit and 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. It has a block size of 64 pages, translating to 128 KB plus 4 KB for x8 and 64 KB plus 2 KB for x16. Performance specifications include a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns. The typical program time is 200 ¬µs, while block erase times are 3.5 ms for the S34ML04G1. The device is rated for 100,000 program/erase cycles and offers a data retention period of 10 years. It complies with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The operating temperature range is suitable for industrial applications, from -40 ¬8C to 85 ¬8C, and automotive applications, from -40 ¬8C to 105 ¬8C. The device is available in lead-free and low halogen packaging options, including a 48-pin TSOP and a 63-ball BGA package.

Datasheet Summary
Powered by GS/AI

The S34ML04G100TFV000 is a 4 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a 3.3 V supply voltage with a range of 2.7 V to 3.6 V. The device supports an 8-bit and 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. It has a block size of 64 pages, translating to 128 KB plus 4 KB for x8 and 64 KB plus 2 KB for x16. Performance specifications include a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns. The typical program time is 200 ¬µs, while block erase times are 3.5 ms for the S34ML04G1. The device is rated for 100,000 program/erase cycles and offers a data retention period of 10 years. It complies with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The operating temperature range is suitable for industrial applications, from -40 ¬8C to 85 ¬8C, and automotive applications, from -40 ¬8C to 105 ¬8C. The device is available in lead-free and low halogen packaging options, including a 48-pin TSOP and a 63-ball BGA package.

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML04G100TFV000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML04G100TFV000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G100TFV000
Integrated Circuits (ICs) - Memory - Memory S34ML04G100TFV000
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML04G100TFV000 S34ML04G100TFV000
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
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