Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34ML04G100TFV000

Description
IC FLASH 4GBIT PARALLEL 48TSOP
Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet
Datasheet Summary
Powered by GS/AI

The S34ML04G100TFV000 is a 4 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a 3.3 V supply voltage with a range of 2.7 V to 3.6 V. The device supports an 8-bit and 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. It has a block size of 64 pages, translating to 128 KB plus 4 KB for x8 and 64 KB plus 2 KB for x16. Performance specifications include a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns. The typical program time is 200 ¬µs, while block erase times are 3.5 ms for the S34ML04G1. The device is rated for 100,000 program/erase cycles and offers a data retention period of 10 years. It complies with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The operating temperature range is suitable for industrial applications, from -40 ¬8C to 85 ¬8C, and automotive applications, from -40 ¬8C to 105 ¬8C. The device is available in lead-free and low halogen packaging options, including a 48-pin TSOP and a 63-ball BGA package.

Datasheet Summary
Powered by GS/AI

The S34ML04G100TFV000 is a 4 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a 3.3 V supply voltage with a range of 2.7 V to 3.6 V. The device supports an 8-bit and 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. It has a block size of 64 pages, translating to 128 KB plus 4 KB for x8 and 64 KB plus 2 KB for x16. Performance specifications include a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns. The typical program time is 200 ¬µs, while block erase times are 3.5 ms for the S34ML04G1. The device is rated for 100,000 program/erase cycles and offers a data retention period of 10 years. It complies with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The operating temperature range is suitable for industrial applications, from -40 ¬8C to 85 ¬8C, and automotive applications, from -40 ¬8C to 105 ¬8C. The device is available in lead-free and low halogen packaging options, including a 48-pin TSOP and a 63-ball BGA package.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34ML04G100TFV000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G100TFV000
Integrated Circuits (ICs) - Memory - Memory S34ML04G100TFV000
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site
Memory - S34ML04G100TFV000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34ML04G100TFV000 S34ML04G100TFV000
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 8 611 200 879 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers