Cypress Semiconductor Corp. Memory S34ML02G200BHI503

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML02G200BHI503 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number S34ML02G200BHI503
Product Name Memory
Memory Category Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28294110 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - CAT28F010G12 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 120 ns
Density 1000 kbits
View Details
SmartMedia Cards - 7723176 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64 kbits
View Details
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details